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NEET PHYSICSEasy

Which one of the following statements is false?

A

Pure Si doped with trivalent impurities gives a p-type semiconductor

B

Majority carriers in an n-type semiconductor are holes

C

Minority carriers in a p-type semiconductor are electrons

D

The resistance of intrinsic semiconductor decreases with increase of temperature

Step-by-Step Solution

  1. Option A (True): Doping an intrinsic semiconductor like Silicon with a trivalent impurity (Group 13) creates excess holes, forming a p-type semiconductor.
  2. Option B (False): In an n-type semiconductor, the dopants are pentavalent impurities that provide extra free electrons. Therefore, electrons are the majority charge carriers, and holes are the minority charge carriers.
  3. Option C (True): As established, in a p-type semiconductor, holes are the majority carriers, making electrons the minority carriers.
  4. Option D (True): For an intrinsic semiconductor, increasing the temperature provides thermal energy that breaks covalent bonds, creating more electron-hole pairs. This increases the conductivity and consequently decreases the resistance.
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