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NEET PHYSICSMedium

C and Si both have the same lattice structure, having 4 bonding electrons in each. However, C is an insulator whereas Si is an intrinsic semiconductor. This is because:

A

in case of C, the valence band is not completely filled at absolute zero temperature.

B

in case of C, the conduction band is partly filled even at absolute zero temperature.

C

the four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third orbit.

D

the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.

Step-by-Step Solution

  1. Electronic Configuration: Carbon (atomic number 6) has the electronic configuration 1s22s22p21s^2 2s^2 2p^2, meaning its 4 valence (bonding) electrons are in the second principal quantum shell (n=2n=2). Silicon (atomic number 14) has the configuration 1s22s22p63s23p21s^2 2s^2 2p^6 3s^2 3p^2, so its 4 valence electrons are in the third shell (n=3n=3).
  2. Band Gap: Because the valence electrons in carbon are in the n=2n=2 orbit, they are much closer to the nucleus and more tightly bound than the n=3n=3 electrons in silicon.
  3. Conclusion: This strong binding in carbon results in a very large energy gap (band gap 5.4 eV\approx 5.4\text{ eV}) between the valence band and the conduction band, making diamond (carbon) an insulator. In contrast, the electrons in silicon are farther from the nucleus, resulting in a smaller band gap (1.1 eV\approx 1.1\text{ eV}), which allows it to act as an intrinsic semiconductor at room temperature.
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