The current in a semiconductor is directly proportional to the concentration of charge carriers and their mobility ($I = nAe\mu E$). We are given that the electron concentration in the n-type semiconductor is equal to the hole concentration in the p-type semiconductor ($n_e = n_h$), and the applied electric field ($E$) is the same. However, the mobility of free electrons ($\mu_e$) in the conduction band is significantly greater than the mobility of holes ($\mu_h$) in the valence band. Since current is directly proportional to mobility, the current in the n-type semiconductor will be greater than the current in the p-type semiconductor ($I_n > I_p$).