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The barrier potential of a p-n junction depends on: (i) type of semiconductor material (ii) amount of doping (iii) temperature Which one of the following is correct?

A

(i) and (ii) only

B

(ii) only

C

(ii) and (iii) only

D

(i), (ii) and (iii)

Step-by-Step Solution

  1. Type of Semiconductor Material: The barrier potential inherently depends on the bandgap of the material used. For instance, at room temperature, it is approximately 0.7 V0.7\text{ V} for Silicon and 0.3 V0.3\text{ V} for Germanium.
  2. Amount of Doping: The built-in potential barrier is determined by the concentration of acceptor atoms in the p-region and donor atoms in the n-region. Higher doping concentrations lead to a higher barrier potential.
  3. Temperature: The barrier potential is temperature-dependent because the intrinsic carrier concentration changes with temperature. Specifically, the barrier potential decreases as the temperature increases.
  4. Conclusion: Therefore, the barrier potential depends on all three factors: the type of material, the amount of doping, and the temperature.
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