NEET Physics: Electronic Devices — MCQ Test 5

Q6. In a full-wave rectifier with centre-tap transformer, the output frequency for a 50 Hz input is:

Q7. In reverse bias, the width of the depletion region:

Q8. Which material has the smallest energy gap among C, Si, and Ge?

Q9. In an n-type semiconductor, the number of electrons contributed by donors is:

Q10. In a rectifier circuit, the diode conducts when it is:

NEET Physics — Electronic Devices

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The barrier potential in a p-n junction opposes the flow of:

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About this NEET MCQ Test

This page provides a free online MCQ test for NEET Physics preparation, focusing specifically on the chapter Electronic Devices. It contains 10 carefully selected multiple-choice questions (MCQs) designed to test your conceptual understanding and exam readiness.

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Key concepts covered in this specific test include Potential, Junction, Following, Elemental, Semiconductor, and Trivalent.

Taking these timed MCQ tests helps you simulate the real NEET exam environment. Detailed step-by-step explanations are provided for every question to help you learn from your mistakes and strengthen your fundamentals.

Preview of Questions in this Test

Q1. The barrier potential in a p-n junction opposes the flow of:

  • A. Majority carriers
  • B. Minority carriers
  • C. Neutral atoms
  • D. Ionized impurities

Q2. Which of the following is an elemental semiconductor?

  • A. GaAs
  • B. Ge
  • C. CdS
  • D. InP

Q3. Which of the following is a trivalent dopant used in p-type semiconductors?

  • A. Phosphorus
  • B. Aluminium
  • C. Arsenic
  • D. Antimony

Q4. In an intrinsic semiconductor, the equilibrium condition implies:

  • A. No current flows
  • B. Generation equals recombination
  • C. Diffusion exceeds drift
  • D. Holes outnumber electrons

Q5. In an intrinsic semiconductor, the number of charge carriers increases with:

  • A. Increase in temperature
  • B. Decrease in temperature
  • C. Addition of impurities
  • D. Application of electric field

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