NEET Physics: Electronic Devices — MCQ Test 7

Q6. In a p-type semiconductor, the acceptor impurities create:

Q7. A silicon diode has a threshold voltage of approximately:

Q8. The resistivity of a semiconductor typically lies in the range:

Q9. In an intrinsic semiconductor, the hole movement is due to:

Q10. In forward bias, the effective barrier height of a p-n junction is:

Q11. In an intrinsic semiconductor, the number of free electrons (\( n_e \)) is equal to:

Q12. The maximum number of electrons that can occupy the outer orbit of a Si atom is:

Q13. Which material among Si, Ge, and Sn behaves as a metal?

Q14. In a reverse-biased p-n junction, the effective barrier height is:

NEET Physics — Electronic Devices

Free MCQ Test 7 of 9

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Medium

In a full-wave rectifier, the number of diodes typically used with a centre-tap transformer is:

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About this NEET MCQ Test

This page provides a free online MCQ test for NEET Physics preparation, focusing specifically on the chapter Electronic Devices. It contains 14 carefully selected multiple-choice questions (MCQs) designed to test your conceptual understanding and exam readiness.

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Key concepts covered in this specific test include Rectifier, Typically, Transformer, Intrinsic, Semiconductor, and Impurities.

Taking these timed MCQ tests helps you simulate the real NEET exam environment. Detailed step-by-step explanations are provided for every question to help you learn from your mistakes and strengthen your fundamentals.

Preview of Questions in this Test

Q1. In a full-wave rectifier, the number of diodes typically used with a centre-tap transformer is:

  • A. 1
  • B. 3
  • C. 4
  • D. 2

Q2. In an intrinsic semiconductor, the total current is the sum of:

  • A. Diffusion and recombination currents
  • B. Drift and recombination currents
  • C. Electron and hole currents
  • D. Diffusion and drift currents

Q3. In an n-type semiconductor, the donor impurities contribute:

  • A. Extra electrons
  • B. Extra holes
  • C. Positive ions only
  • D. Negative ions only

Q4. The forward current in a p-n junction diode increases significantly beyond:

  • A. Threshold voltage
  • B. Breakdown voltage
  • C. Reverse saturation point
  • D. Equilibrium potential

Q5. A pure Si crystal is doped with 1 ppm of pentavalent impurity. If the Si atom density is \( 5 \times 10^{28} \, \text{m}^{-3} \), the number of donor atoms per cubic meter is:

  • A. \( 5 \times 10^{20} \, \text{m}^{-3} \)
  • B. \( 5 \times 10^{24} \, \text{m}^{-3} \)
  • C. \( 5 \times 10^{26} \, \text{m}^{-3} \)
  • D. \( 5 \times 10^{22} \, \text{m}^{-3} \)

+ 9 more questions in the actual test

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