NEET Physics: Electronic Devices — MCQ Test 6

Q6. In an extrinsic semiconductor, the minority carrier concentration is reduced due to:

Q7. The majority carriers in a p-type semiconductor are:

Q8. Which of the following has the highest energy gap?

Q9. In a full-wave rectifier, the voltage across each diode is:

Q10. What is the primary source of charge carriers in an intrinsic semiconductor at room temperature?

NEET Physics — Electronic Devices

Free MCQ Test 6 of 9

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A Si crystal with \( 5 \times 10^{28} \, \text{atoms} \, \text{m}^{-3} \) is doped with 0.5 ppm of pentavalent impurity. The number of donor electrons per cubic meter is:

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About this NEET MCQ Test

This page provides a free online MCQ test for NEET Physics preparation, focusing specifically on the chapter Electronic Devices. It contains 10 carefully selected multiple-choice questions (MCQs) designed to test your conceptual understanding and exam readiness.

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Key concepts covered in this specific test include Pentavalent, Impurity, Electrons, Junction, Typically, and Measured.

Taking these timed MCQ tests helps you simulate the real NEET exam environment. Detailed step-by-step explanations are provided for every question to help you learn from your mistakes and strengthen your fundamentals.

Preview of Questions in this Test

Q1. A Si crystal with \( 5 \times 10^{28} \, \text{atoms} \, \text{m}^{-3} \) is doped with 0.5 ppm of pentavalent impurity. The number of donor electrons per cubic meter is:

  • A. \( 5 \times 10^{22} \, \text{m}^{-3} \)
  • B. \( 1 \times 10^{22} \, \text{m}^{-3} \)
  • C. \( 7.5 \times 10^{22} \, \text{m}^{-3} \)
  • D. \( 2.5 \times 10^{22} \, \text{m}^{-3} \)

Q2. The space-charge region in a p-n junction is also known as:

  • A. Diffusion zone
  • B. Conduction zone
  • C. Depletion region
  • D. Neutral region

Q3. The forward bias current in a diode is typically measured in:

  • A. Microampere (\( \mu \text{A} \))
  • B. Nanoampere (nA)
  • C. Milliampere (mA)
  • D. Ampere (A)

Q4. The reverse bias resistance of a p-n junction diode is typically:

  • A. Low
  • B. Moderate
  • C. Zero
  • D. High

Q5. The voltage drop in a forward-biased diode occurs mainly across:

  • A. P-side
  • B. Depletion region
  • C. N-side
  • D. Entire diode

+ 5 more questions in the actual test

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