Q1. The reverse saturation current in a diode is:A. Proportional to reverse voltageB. Inversely proportional to voltageC. Nearly independent of voltageD. Zero
Q2. In a p-type semiconductor, the number of holes is related to electrons by:A. \( n_h = n_e \)B. \( n_h < n_e \)C. \( n_h \gg n_e \)D. \( n_h = n_e^2 \)
Q3. The purpose of a capacitor in a rectifier circuit is to:A. Increase currentB. Smooth the output voltageC. Reduce input frequencyD. Block DC voltage
Q4. In an extrinsic semiconductor, the overall charge neutrality is maintained because:A. Charge of carriers equals that of ionized coresB. No recombination occursC. Thermal generation is absentD. Drift current cancels diffusion current
Q6. The number of outer electrons in a Si crystal with \( N \) atoms is:A. \( 2N \)B. \( 8N \)C. \( 4N \)D. \( N \)
Q8. The electric field in the depletion region of a p-n junction is directed from:A. P-side to n-sideB. Negative to positive chargeC. N-side to p-sideD. Neutral region to junction
Q9. The minority carrier injection in a forward-biased diode refers to:A. Drift of majority carriersB. Diffusion of donor atomsC. Crossing of carriers to opposite sidesD. Recombination in the depletion region
Q10. The electrical conductivity of a semiconductor is:A. Higher than metalsB. Intermediate to metals and insulatorsC. Lower than insulatorsD. Equal to metals