NEET Electronic Devices — Set 5

Question 1

The barrier potential in a p-n junction opposes the flow of:

Accepted Answer

The barrier potential arises due to the space-charge region and opposes the diffusion of majority carriers (electrons from n-side to p-side and holes from p-side to n-side) at equilibrium.

Question 2

Which of the following is an elemental semiconductor?

Accepted Answer

Elemental semiconductors are pure elements like Si and Ge, while compound semiconductors (e.g., GaAs, CdS) consist of multiple elements. Among the options, Ge is elemental.

Question 3

Which of the following is a trivalent dopant used in p-type semiconductors?

Accepted Answer

Trivalent dopants (valency 3) like Boron (B), Aluminium (Al), and Indium (In) are used in p-type semiconductors to create holes. Phosphorus (P) is pentavalent.

NEET Physics: Electronic Devices — Practice Set 5

Q1. The barrier potential in a p-n junction opposes the flow of:

Q2. Which of the following is an elemental semiconductor?

Q3. Which of the following is a trivalent dopant used in p-type semiconductors?

Q4. In an intrinsic semiconductor, the equilibrium condition implies:

Q5. In an intrinsic semiconductor, the number of charge carriers increases with:

Q6. In a full-wave rectifier with centre-tap transformer, the output frequency for a 50 Hz input is:

Q7. In reverse bias, the width of the depletion region:

Q8. Which material has the smallest energy gap among C, Si, and Ge?

Q9. In an n-type semiconductor, the number of electrons contributed by donors is:

Q10. In a rectifier circuit, the diode conducts when it is: