NEET Electronic Devices — Set 8

Question 1

A p-type semiconductor is doped with:

Accepted Answer

A p-type semiconductor is created by doping a tetravalent semiconductor (e.g., Si) with a trivalent impurity (e.g., B, Al, In), which accepts electrons and creates holes as majority carriers.

Question 2

During p-n junction formation, the depletion region is formed due to:

Accepted Answer

The depletion region forms due to diffusion of electrons and holes across the junction, leaving behind immobile ionized impurities that create a space-charge region.

Question 3

The reverse current in a diode increases sharply at:

Accepted Answer

The reverse current remains small ($ \mu \text{A} $) until the reverse bias reaches the breakdown voltage ($ V_{br} $), where it increases sharply due to junction breakdown.

NEET Physics: Electronic Devices — Practice Set 8

Q1. A p-type semiconductor is doped with:

Q2. During p-n junction formation, the depletion region is formed due to:

Q3. The reverse current in a diode increases sharply at:

Q4. The primary advantage of a semiconductor diode over a vacuum tube is:

Q5. In a half-wave rectifier, the output frequency is:

Q6. The diffusion current in a p-n junction is due to:

Q7. Which of the following is NOT a pentavalent dopant?

Q8. The diode in a half-wave rectifier conducts during:

Q9. The output of a full-wave rectifier without a filter is:

Q10. A diode in reverse bias primarily allows current due to: