Q1. In a full-wave rectifier, the number of diodes typically used with a centre-tap transformer is:
A. 1
B. 3
C. 4
D. 2
Q2. In an intrinsic semiconductor, the total current is the sum of:
A. Diffusion and recombination currents
B. Drift and recombination currents
C. Electron and hole currents
D. Diffusion and drift currents
Q3. In an n-type semiconductor, the donor impurities contribute:
A. Extra electrons
B. Extra holes
C. Positive ions only
D. Negative ions only
Q4. The forward current in a p-n junction diode increases significantly beyond:
A. Threshold voltage
B. Breakdown voltage
C. Reverse saturation point
D. Equilibrium potential
Q5. A pure Si crystal is doped with 1 ppm of pentavalent impurity. If the Si atom density is \( 5 \times 10^{28} \, \text{m}^{-3} \), the number of donor atoms per cubic meter is:
A. \( 5 \times 10^{20} \, \text{m}^{-3} \)
B. \( 5 \times 10^{24} \, \text{m}^{-3} \)
C. \( 5 \times 10^{26} \, \text{m}^{-3} \)
D. \( 5 \times 10^{22} \, \text{m}^{-3} \)
Q6. In a p-type semiconductor, the acceptor impurities create:
A. Extra electrons
B. Holes
C. Positive ions only
D. Neutral atoms
Q7. A silicon diode has a threshold voltage of approximately:
A. 0.2 V
B. 0.5 V
C. 1.0 V
D. 0.7 V
Q8. The resistivity of a semiconductor typically lies in the range:
A. \( 10^{-2} \) to \( 10^{-8} \, \Omega \, \text{m} \)
B. \( 10^{10} \) to \( 10^{19} \, \Omega \, \text{m} \)
C. \( 10^{-5} \) to \( 10^6 \, \Omega \, \text{m} \)
D. \( 10^5 \) to \( 10^8 \, \Omega \, \text{m} \)
Q9. In an intrinsic semiconductor, the hole movement is due to:
A. Free electron drift
B. Ionic displacement
C. Electron jumps in bonds
D. Thermal generation only
Q10. In forward bias, the effective barrier height of a p-n junction is:
A. \( V_0 + V \)
B. \( V_0 - V \)
C. \( V_0 \)
D. \( V \)
Q11. In an intrinsic semiconductor, the number of free electrons (\( n_e \)) is equal to:
A. Number of holes (\( n_h \))
B. Twice the number of holes
C. Half the number of holes
D. Zero
Q12. The maximum number of electrons that can occupy the outer orbit of a Si atom is:
A. 4
B. 6
C. 2
D. 8
Q13. Which material among Si, Ge, and Sn behaves as a metal?
A. Si
B. Ge
C. C
D. Sn
Q14. In a reverse-biased p-n junction, the effective barrier height is:
A. \( V_0 - V \)
B. \( V \)
C. \( V_0 \)
D. \( V_0 + V \)
Physics — Electronic Devices
Set 7 of 9
21:00
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